Deep level defects in n-type GaAsBi and GaAs grown at low temperatures (vol 113, 133708, 2013)

被引：4

作者：

Mooney, P. M. ^{[1
]}

Watkins, K. P. ^{[1
]}

Jiang, Zenan ^{[1
]}

Basile, A. F. ^{[1
]}

Lewis, R. B. ^{[2
]}

Bahrami-Yekta, V. ^{[2
]}

Masnadi-Shirazi, M. ^{[2
]}

Beaton, D. A. ^{[2
]}

Tiedje, T. ^{[2
]}

机构：

[1] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada

[2] Univ Victoria, Dept Elect & Comp Engn, Victoria, BC V8P 5C2, Canada

来源：

JOURNAL OF APPLIED PHYSICS | 2015年 / 117卷 / 01期

关键词：

D O I：

10.1063/1.4905390

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页数：1

共 50 条

[11] DEEP LEVELS IN OXYGEN-GROWN N-TYPE GAAS
HUTH, F
PHYSICA STATUS SOLIDI, 1969, 31 (02): : K119 - +
[12] DEEP-LEVEL DEFECTS IN N-TYPE GAN
GOTZ, W
JOHNSON, NM
AMANO, H
AKASAKI, I
APPLIED PHYSICS LETTERS, 1994, 65 (04) : 463 - 465
[13] MAGNETORESISTANCE IN LIGHTLY DOPED N-TYPE GAAS AT LOW TEMPERATURES
EMELYANENKO, OV
NASLEDOV, DN
URMANOV, NA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (11): : 1356 - +
[14] Deep level defects in n-type GaN compensated with Mg
Yi, GC
Wessels, BW
APPLIED PHYSICS LETTERS, 1996, 68 (26) : 3769 - 3771
[15] CRITICAL CRITERION FOR AXIAL MODELS OF DEFECTS IN AS-GROWN N-TYPE GAAS
NOLTE, DD
WALUKIEWICZ, W
HALLER, EE
PHYSICAL REVIEW B, 1987, 36 (17): : 9374 - 9377
[16] IMPURITY CONDUCTION IN N-TYPE GAAS AT VERY LOW-TEMPERATURES
EMELYANENKO, OV
NASLEDOV, DN
NIKULIN, EI
TIMCHENKO, IN
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (11): : 1926 - 1927
[17] HALL EFFECT IN SLIGHTLY DOPED N-TYPE GAAS AT LOW TEMPERATURES
EMELYANENKO, OV
NASLEDOV, DN
URMANOV, NA
PHYSICA STATUS SOLIDI, 1969, 32 (02): : K175 - +
[18] DEEP-LEVEL CHARACTERIZATION OF N-TYPE GAAS BY PHOTOREFLECTANCE SPECTROSCOPY
KANATA, T
MATSUNAGA, M
TAKAKURA, H
HAMAKAWA, Y
NISHINO, T
JOURNAL OF APPLIED PHYSICS, 1991, 69 (06) : 3691 - 3695
[19] ANNEALING OF DEEP-LEVEL RADIATION DEFECTS IN N-TYPE INP
KOLCHENKO, TI
LOMAKO, VM
MOROZ, SE
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (11): : 1221 - 1224
[20] NEGATIVE PHOTOCONDUCTIVITY OF STRONGLY COMPENSATED N-TYPE GAAS AT LOW-TEMPERATURES
KANSKAYA, LM
KOLCHANOVA, NM
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (04): : 474 - 476

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