InGaAsP/GaAs SCHSQW laser arrays grown by LPE

被引：0
作者：
Bo, BX
Gao, X
Qu, Y
Zhang, XD
Gao, DS
机构：
[1] CIOM, Natl Key Lab High Power Semicond Lasers, Changchun 130022, Peoples R China
[2] Jilin Univ, Dept Elect Engn, Changchun, Peoples R China
来源：
OPTICS AND LASER TECHNOLOGY | 2000年 / 32卷 / 05期
关键词：
high power; InGaAsP/GaAs; laser; LPE;
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
InGaAsP/InGaP/GaAs separate confinement heterostructure (SCH) single quantum well (SQW) laser structures have been obtained by an improved liquid-phase epitaxy (LPE) process. Wide-contact stripe lasers have been fabricated with threshold current density below 300 A/cm(2) and cavity length of 800 mum. Finally, with the same grown wafers, 1-cm bar laser diode (LD) arrays are made with 150 mum wide stripes and a maximum fill factor of 30%. Continuous wave (CW) power output of 20 W has been reached. (C) 2000 Elsevier Science Ltd. All rights reserved.
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页码：335 / 338
页数：4
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