Analyzing Radiation-Induced Transient Errors on SRAM-Based FPGAs by Propagation of Broadening Effect

被引:11
作者
De Sio, Corrado [1 ]
Azimi, Sarah [1 ]
Sterpone, Luca [1 ]
Du, Boyang [1 ]
机构
[1] Politecn Torino, Dipartimento Automat & Informat, I-10129 Turin, Italy
关键词
Function generator; propagation induced pulse broadening; LUTs; single event transients; SRAM-based FPGA; SINGLE EVENT TRANSIENTS; SET PROPAGATION; CONFIGURATION;
D O I
10.1109/ACCESS.2019.2915136
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
SRAM-based field programmable gate arrays (FPGAs) are widely used in mission-critical applications, such as aerospace and avionics. Due to the increasing working frequency and technology scaling of ultra-nanometer technology, single event transients (SETs) are becoming a major source of errors for these devices. In this paper, we propose a workflow for evaluating the behavior of SETs in SRAM-based FPGAs. The method is able to compute the propagation-induced pulse broadening (PIPB) effect introduced by the logic resources traversed by transient pulses. Besides, we developed an accurate lookup table (LUT) layout model able to effectively predict the kinds of the SETs induced by radiation-particle and to accurately mimic the phenomena of the SET generation and propagation. The proposed methodology is applicable to any recent technology to provide the SET analysis, necessary for an efficient mitigation technology. The experimental results achieved from a set of benchmark circuits mapped on a 28-nm SRAM-based FPGA and compared with the fault injection experiments demonstrate the effectiveness of our technique.
引用
收藏
页码:140182 / 140189
页数:8
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