Tunneling junctions under finite bias voltages: Ab initio calculations of electron densities and currents

被引:0
|
作者
Carva, K [1 ]
Turek, I [1 ]
机构
[1] Charles Univ Prague, Fac Math & Phys, Dept Elect Struct, Prague 12116 2, Czech Republic
关键词
D O I
10.1002/pssc.200405555
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Electronic structures of bielectrode junctions under external bias voltages were recently solved numerically on an ab initio basis using nonequilibrium Green's function methods in combination with the density functional theory. Here we examine this technique by applying it to two electrodes within a jellium model separated by a vacuum layer. We investigate the charge distribution, the shape of the tunnel barrier and the current. Our results suggest, that this method is valid only in a limited range of external bias voltages. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:3369 / 3372
页数:4
相关论文
共 50 条