Thermal modelling of packaged silicon millimeterwave IMPATT diode - CW case

被引：2

作者：

Akhtar, J ^{[1
]}

机构：

[1] Cent Elect Engn Res Inst, Semicond Devices Area, Pilani 333031, Rajasthan, India

来源：

IETE TECHNICAL REVIEW | 1997年 / 14卷 / 06期

关键词：

D O I：

10.1080/02564602.1997.11416709

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Temperature distribution in millimeterwave IMPATT diode structure and the conventional package assembly comprising of gold and diamond heatsinks, is computed numerically in quasi-three dimensions, for CW mode of operation. Steady state heat flow equation is descretised using finite difference code and the resulting equations are solved by Successive Over Relaxation (SOR) technique with optimised parameters. Effect of intermediate layer of gold, commonly used in the packaging of these diodes, is studied for optimal thermal resistance of the packaged diode.

引用

页码：451 / 458

页数：8

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