A statistical model to predict the performance variation of polysilicon TFTs formed by grain-enhancement technology

被引：11

作者：

Cheng, CF ^{[1
]}

Jagar, S ^{[1
]}

Poon, MC ^{[1
]}

Kok, CW ^{[1
]}

Chan, MS ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Kowloon, Hong Kong, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2004年 / 51卷 / 12期

关键词：

crystallization; grain boundaries; polysilicon; statistical modeling; thin-film transistors (TFTs);

D O I：

10.1109/TED.2004.838325

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A statistical model to predict grain boundary distribution in the channel of a polysilicon thin-film transistor ITFT) is proposed. The model is valid for arbitrary transistor size to grain size ratio, and is particularly useful to predict the grain boundary distribution of recrystallized large-grain polysilicon TFTs where the transistor size is comparable to the grains size and gives significant device-to-device variation. The model has been extensively verified by comparing it with statistical data obtained from TFTs fabricated using metal-induced-lateral-crystallization and regular solid-phase epitaxial techniques. Good agreements between the experimental results and model prediction are demonstrated.

引用

页码：2061 / 2068

页数：8

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