Laser spectrum line shape metrology at 193 nm

被引:5
|
作者
Ershov, AI [1 ]
Padmabandu, GG [1 ]
Tyler, J [1 ]
Das, PP [1 ]
机构
[1] Cymer Inc, San Diego, CA 92127 USA
来源
OPTICAL MICROLITHOGRAPHY XIII, PTS 1 AND 2 | 2000年 / 4000卷
关键词
ArF laser; 193nm microlithography; metrology; spectrum;
D O I
10.1117/12.388978
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The spectral shape requirements for an ArF laser for 193nm microlithography are expected to be about 2X tighter than at 248nm. This is in part due to the dispersion of fused silica and CaF2 at 193nm and in part due to the push by the lens designers towards higher NA lenses. However, unlike 248nm, it is likely that the process engineer may not be satisfied with simple spectral bandwidth measurements of Full-Width-At-Half-Maximum (FWHM). Instead, the knowledge of the complete spectral shape may be required, since it is the total shape that has an impact on the lens performance. This requirement may have significant impact on corresponding metrology tools. These toots should be either portable or built into the laser. They should be able to provide continuos feedback to the process engineer as far as the lens performance is considered. Present paper discusses recent developments in 193 nm metrology which can be implemented as a part of laser on-board diagnostics or as a field service tool, and is capable of accurately measuring the laser spectrum shape. This information, together with proprietary lens parameters, will allow process engineer to accurately evaluate the aberrations due to the laser line shape.
引用
收藏
页码:1405 / 1417
页数:13
相关论文
共 50 条
  • [1] Challenges of laser spectrum metrology in 248 and 193-nm lithography
    Ershov, A
    Smith, S
    OPTICAL MICROLITHOGRAPHY XIV, PTS 1 AND 2, 2001, 4346 : 1219 - 1228
  • [2] Line-narrowed ArF excimer laser for 193 nm lithography
    Saito, T
    Mitsuhashi, K
    Arai, M
    Seki, K
    Tada, A
    Igarashi, T
    Hotta, K
    OPTICAL MICROLITHOGRAPHY XII, PTS 1 AND 2, 1999, 3679 : 1069 - 1075
  • [3] A 193 nm microscope for CD metrology for the 32nm node and beyond
    Bodermann, Bernd
    Li, Zhi
    Pilarski, Frank
    Bergmann, Detlef
    26TH EUROPEAN MASK AND LITHOGRAPHY CONFERENCE, 2010, 7545
  • [4] Rotational spectrum of HCBr produced by 193-nm laser photolysis of bromoform
    Duan, CX
    Hassouna, M
    Walters, A
    Godon, M
    Dréan, P
    Bogey, M
    JOURNAL OF MOLECULAR SPECTROSCOPY, 2003, 220 (01) : 113 - 121
  • [5] THE LASER-INDUCED FLUORESCENCE-SPECTRUM OF SIF AROUND 193 NM
    EBBEN, M
    VERSLUIS, M
    TERMEULEN, JJ
    JOURNAL OF MOLECULAR SPECTROSCOPY, 1991, 149 (02) : 329 - 340
  • [6] Optical metrology for 193nm immersion objective characterization
    Aronstein, D
    Bentley, J
    Dewa, P
    Dunn, M
    Schreiber, H
    Nguyen, T
    Webb, J
    OPTICAL MICROLITHOGRAPHY XVII, PTS 1-3, 2004, 5377 : 836 - 845
  • [7] Echelle and etalon used for spectral metrology of excimer laser lithographic light sources at 193nm
    Gao Fei
    Zhao Jiangshan
    Liu Guangyi
    Wang Qian
    Bai Lujun
    AOPC 2015: MICRO/NANO OPTICAL MANUFACTURING TECHNOLOGIES; AND LASER PROCESSING AND RAPID PROTOTYPING TECHNIQUES, 2015, 9673
  • [8] Quantitative Pattern Collapse Metrology for 193nm Immersion Lithography
    Winroth, Gustaf
    Gronheid, Roel
    Lin, Chua
    Neishi, Katsumi
    Harukawa, Ryota
    Marcuccilli, Gino
    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2011, 24 (02) : 233 - 238
  • [9] Electron beam metrology of 193 nm resists at ultra low voltage
    Sullivan, N
    Dixson, R
    Bunday, B
    Mastovich, M
    Knutrud, P
    Fabre, P
    Brandom, R
    METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVII, PTS 1 AND 2, 2003, 5038 : 483 - 492
  • [10] Research of cornea section's shape ablated by 193-nm ArF laser spots
    朱志强
    余吟山
    邓国庆
    Chinese Optics Letters, 2005, (11) : 655 - 658