Optical and Photo-Electrical properties of Zinc Tin Oxide Thin-Film Phototransistor

被引：0

作者：

Yang, Chen-Chuan

Tung, Wan-Ju

Chang, Sheng-Po ^{[1
]}

Hsu, Ming-Hung

Huang, Wei-Lun

Li, Cheng-Hsun

Fang, Yu-Jui

Chang, Shoou-Jinn

机构：

[1] Natl Cheng Kung Univ, Ctr Micro Nano Sci & Technol, Adv Optoelect Technol Ctr, Inst Microelect, Tainan 70101, Taiwan

来源：

2018 7TH IEEE INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE) | 2018年

关键词：

Zinc Tin Oxide; thin-film transistor; phototransistor;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated the optical and electrical properties of the zinc tin oxide (ZTO) thin-film phototransistors. The device has a threshold voltage of 0.48 V, field effect mobility of 1.47 cm(2)/Vs in the saturation region, on/off drain current ratio of 2x10(6), and subthreshold swing of 0.45 V/decade under dark environment. As an UV photodetector, the device has a responsivity of 0.329 A/W and a rejection ratio of 3.19x10(4) at a gate voltage of -15 V under illumination of wavelength 300 nm.

引用

页码：405 / 406

页数：2

共 2 条

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