DC-DC Converters Using Indium Gallium Zinc Oxide Thin Film Transistors for Mobile Display Applications

被引：12

作者：

Hong, Seok-Ha ^{[1
]}

Yang, Ik-Seok ^{[1
]}

Kang, Jin-Seong ^{[1
]}

Hwang, Tong-Hun ^{[1
]}

Kwon, Oh-Kyong ^{[1
]}

Byun, Choon-Won ^{[2
]}

Cheong, Woo-Seok ^{[2
]}

Hwang, Chi-Sun ^{[2
]}

Cho, Kyong-Ik ^{[2
]}

机构：

[1] Hanyang Univ, Div Elect & Comp Engn, Seoul 133791, South Korea

[2] Elect & Telecommun Res Inst, Transparent Elect Team, Taejon 305700, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 03期

关键词：

D O I：

10.1143/JJAP.49.03CB05

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

DC-DC converters integrated into a panel are proposed for mobile display applications using indium gallium zinc oxide (IGZO) thin film transistors (TFTs). The proposed positive DC-DC converter uses cross-coupled and diode-connected structures for a high output voltage and a high power efficiency, while the proposed negative DC-DC converter uses also a cross-coupled structure but with separated pumping capacitors for a negative output voltage and a high power efficiency. The simulated results show that the output voltage and power efficiency are 21.3 V and 69.5% for the positive DC-DC converter and -5.1 V and 56.1% for the negative DC-DC converter, respectively, at a supply voltage of 10 V and a load current of 250 mu A. The measured results show that the output voltage and power efficiency of the proposed positive DC-DC converter are 20.8 V and 66.6%, respectively, under the same conditions as those for the simulated results. (C) 2010 The Japan Society of Applied Physics

引用

页数：5

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