Thermal characteristic of Cu-Cu bonding layer in 3-D integrated circuits stack

被引：7
|
作者：
Tan, Chuan Seng [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
来源：
MICROELECTRONIC ENGINEERING | 2010年 / 87卷 / 04期
关键词：
3-D ICs; Copper; Wafer bonding; Heat dissipation;
D O I：
10.1016/j.mee.2009.09.009
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Copper (Cu) thermo-compression bonding of wafers can be used to fabricate multi-layer three-dimensional (3-D) integrated circuits (ICs). This work examines the thermal characteristic of the Cu bonding layer and demonstrates experimentally that Cu bonding layer can act as a spreading layer that helps in heat dissipation of bonded 3-D ICs stack more efficiently compared to silicon dioxide bonding layer. The use of Cu bonding layer in a double-layer stack of ICs provides better cooling by as much as 9 degrees C compared to oxide bonding interface. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：682 / 685
页数：4
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