Thermal characteristic of Cu-Cu bonding layer in 3-D integrated circuits stack

被引：7

作者：

Tan, Chuan Seng ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

来源：

MICROELECTRONIC ENGINEERING | 2010年 / 87卷 / 04期

关键词：

3-D ICs; Copper; Wafer bonding; Heat dissipation;

D O I：

10.1016/j.mee.2009.09.009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Copper (Cu) thermo-compression bonding of wafers can be used to fabricate multi-layer three-dimensional (3-D) integrated circuits (ICs). This work examines the thermal characteristic of the Cu bonding layer and demonstrates experimentally that Cu bonding layer can act as a spreading layer that helps in heat dissipation of bonded 3-D ICs stack more efficiently compared to silicon dioxide bonding layer. The use of Cu bonding layer in a double-layer stack of ICs provides better cooling by as much as 9 degrees C compared to oxide bonding interface. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：682 / 685

页数：4

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