Research Update: Bismuth-based perovskite-inspired photovoltaic materials

被引：90

作者：

Lee, Lana C. ^{[1
]}

Huq, Tahmida N. ^{[1
]}

MacManus-Driscoll, Judith L. ^{[1
]}

Hoye, Robert L. Z. ^{[1
,2
]}

机构：

[1] Univ Cambridge, Dept Mat Sci & Met, 27 Charles Babbage Rd, Cambridge CB3 0FS, England

[2] Univ Cambridge, Cavendish Lab, JJ Thomson Ave, Cambridge CB3 0HE, England

来源：

APL MATERIALS | 2018年 / 6卷 / 08期

基金：

英国工程与自然科学研究理事会;

关键词：

DEFECT-TOLERANT SEMICONDUCTORS; HALIDE DOUBLE PEROVSKITES; LEAD-FREE; SOLAR-CELLS; PHASE-TRANSITION; IODIDE-CRYSTALS; THIN-FILMS; LAYER; EFFICIENCY; CS2AGBIBR6;

D O I：

10.1063/1.5029484

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Bismuth-based compounds have recently gained interest as solar absorbers with the potential to have low toxicity, be efficient in devices, and be processable using facile methods. We review recent theoretical and experimental investigations into bismuth-based compounds, which shape our understanding of their photovoltaic potential, with particular focus on their defect-tolerance. We also review the processing methods that have been used to control the structural and optoelectronic properties of single crystals and thin films. Additionally, we discuss the key factors limiting their device performance, as well as the future steps needed to ultimately realize these new materials for commercial applications. (C) 2018 Author(s).

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