Adsorbate-induced roughening of Si(100) by interactions at steps

被引：4

作者：

Butera, R. E. ^{[1
]}

Mirabella, D. A. ^{[2
]}

Aldao, C. M. ^{[2
]}

Weaver, J. H. ^{[1
]}

机构：

[1] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA

[2] Univ Nacl Mar del Plata, CONICET, Inst Mat Sci & Technol INTEMA, Mar Del Plata, Buenos Aires, Argentina

来源：

PHYSICAL REVIEW B | 2010年 / 82卷 / 04期

关键词：

VICINAL SI(001) SURFACES; INDUCED RECONSTRUCTION; HYDROGEN; DIFFUSION;

D O I：

10.1103/PhysRevB.82.045309

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Through a detailed study of Cl adsorption on Si(100) using scanning-tunneling microscopy, we identified sites at steps where adsorption leads to roughening and the formation of extended pits and regrowth structures. Using the equilibrium occupation probabilities obtained from experiment, we were able to identify first-nearest-neighbor interactions that destabilized the surface and, when included in Monte Carlo simulations, reproduced the observed pit and regrowth structures. These findings force a reevaluation of currently proposed mechanisms for roughening.

引用

页数：5

共 26 条

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