Modeling of ΔIBL due to random telegraph noise with considering bit-line interference in NAND flash memory

Bit-line (BL) current fluctuation (Delta I-BL = high I-BL - low I-BL) of the trap position is modeled as a parameter of the state (program or erase) of adjacent BL cells which affects the current density distribution appreciably. To model Delta I-BL, we extracted the integrated electron current density (J(0) = f(z)) and the electric blockade length (L-t) by considering the effect of the interference of adjacent cells. A characteristic function (g(z)) which has a Gaussian functional form is defined based on L-t and the trap position within the tunneling oxide from the channel surface (x(T)). Finally, Delta I-BL is extracted through the integration of f(z) and g(z). Our model predicts accurately the Delta I-BL with the trap position as a parameter of the state of BL cells, showing good agreement with 3D simulation data.