Artificial synaptic characteristics with strong analog memristive switching in a Pt/ CeO2/ Pt structure

被引：31

作者：

Kim, Hyung Jun ^{[1
]}

Zheng, Hong ^{[1
]}

Park, Jong-Sung ^{[1
]}

Kim, Dong Hun ^{[1
]}

Kang, Chi Jung ^{[2
]}

Jang, Jun Tae ^{[3
]}

Kim, Dae Hwan ^{[3
]}

Yoon, Tae-Sik ^{[1
]}

机构：

[1] Myongji Univ, Dept Mat Sci & Engn, Gyeonggi Do 17058, South Korea

[2] Myongji Univ, Dept Phys, Gyeonggi Do 17058, South Korea

[3] Kookmin Univ, Sch Elect Engn, Seoul 02707, South Korea

来源：

NANOTECHNOLOGY | 2017年 / 28卷 / 28期

基金：

新加坡国家研究基金会;

关键词：

artificial synapse; memristive device; analog resistance change; CeO2; VALENCE EVALUATION; FILMS; CERIUM; DEVICE; MEMORY; ELECTROLYTE; TRANSISTOR; SYSTEMS; OXYGEN;

D O I：

10.1088/1361-6528/aa712c

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Artificial synaptic potentiation and depression characteristics were demonstrated with Pt/ CeO2/ Pt devices exhibiting polarity-dependent analog memristive switching. The strong and sequential resistance change with its maximum to minimum ratio > 10(5), imperatively essential for stable operation, as repeating voltage application, emulated the potentiation and depression motion of a synapse with variable synaptic weight. The synaptic weight change could be controlled by the amplitude, width, and number of repeated voltage pulses. The voltage polarity-dependent and asymmetric current-voltage characteristics and consequential resistance change are thought to be due to local inhomogeneity of electrical and physical states of CeO2 such as charging at interface states, valence changes of Ce cations, and so on. These results revealed that the CeO2 layer could be a promising material for analog memristive switching elements with strong resistance change, as an artificial synapse in neuromorphic systems.

引用

页数：9

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