Temperature-dependent characteristics of an Al0.2Ga0.8As/ln0.22Ga0.78As pseudomorphic double heterojunction modulation doped field-effect transistor with a GaAs/AlGaAs superlattice buffer layer

被引：14
|
作者：
Li, YJ [1 ]
Hsu, WC [1 ]
Wang, SY [1 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2003年 / 21卷 / 02期
关键词：
D O I：
10.1116/1.1553971
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The Al0.2Ga0.8As/In0.22Ga0.78As pseudomorphic double heterojunction modulation doped field-effect transistor with a superlattice GaAs/Al0.2Ga0.8As buffer layer has been successfully grown by a molecular beam epitaxy (MBE) system, and investigated its temperature-dependent characteristics. The use of a superlattice buffer layer improved the degradation of the device performance at elevated temperatures. For a 1.5 x 125 mum(2) gate dimension, a voltage gain as high as 107 is found at 460 K. Besides, the shift in the threshold voltage is-about 0.222 V from 300 to 460 K. (C) 2003 American Vacuum Society.
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收藏
页码：760 / 762
页数：3
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