Properties of Bi2Te3 single crystals doped with Sn

被引：9
|
作者：
Svechnikova, TE [1 ]
Nikhezina, IY [1 ]
Polikarpova, NV [1 ]
机构：
[1] Russian Acad Sci, Baikov Inst Met & Mat Res, Moscow 117334, Russia
来源：
INORGANIC MATERIALS | 2000年 / 36卷 / 08期
关键词：
Thermoelectric Power; Hall Coefficient; Bismuth Telluride; Dope Crystal; Thermoelectric Figure;
D O I：
10.1007/BF02758594
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of doping with Sn on the properties of Czochrakki-grown Bi2Te3 crystals was studied. The effective segregation coefficient for Sn was determined to be 0.6. The thermoelectric power, electrical conductivity, and Hall coefficient of the doped crystals were measured at room temperature. Doping with low Sn concentrations (0.2-0.5 at. %) was found to have only a weak effect on the electrical properties of p-type Bi2Te3. Doping with 0.7-1 at. % Sn reduces the thermoelectric power and increases the electrical conductivity and hole concentration. Lattice thermal conductivity is a nonmonotonic function of Sn concentration. The thermoelectric figure of merit of Bi2Te3 doped with less than 0.6 at. % Sn exceeds that of undoped Bi2Te3.
引用
收藏
页码：765 / 767
页数：3
相关论文
共 50 条
  • [1] Properties of Bi2Te3 single crystals doped with Sn
    T. E. Svechnikova
    I. Yu. Nikhezina
    N. V. Polikarpova
    Inorganic Materials, 2000, 36 : 765 - 767
  • [2] Conductivity anisotropy in the doped Bi2Te3 single crystals
    Abdullaev, N. A.
    Kakhramanov, S. Sh.
    Kerimova, T. G.
    Mustafayeva, K. M.
    Nemov, S. A.
    SEMICONDUCTORS, 2009, 43 (02) : 145 - 151
  • [3] Thermoelectric properties and phase transition of doped single crystals and polycrystals of Bi2Te3
    Romanenko, Anatoly I.
    Chebanova, Galina E.
    Drozhzhin, Michael V.
    Katamanin, Ivan N.
    Komarov, Vladislav Y.
    Han, M. -K.
    Kim, S. -J.
    Chen, Tingting
    Wang, Hongchao
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2021, 104 (12) : 6242 - 6253
  • [4] Low-temperature transport properties of Tl-doped Bi2Te3 single crystals
    Chi, Hang
    Liu, Wei
    Sun, Kai
    Su, Xianli
    Wang, Guoyu
    Lost'ak, Petr
    Kucek, Vladimir
    Drasar, Cestmir
    Uher, Ctirad
    PHYSICAL REVIEW B, 2013, 88 (04):
  • [5] Semiconductor parameters of Bi2Te3 single crystals
    Nassary, M. M.
    Shaban, H. T.
    El-Sadek, M. S.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2009, 11 (02): : 180 - 185
  • [6] Microstructural characterization of sulfur-doped Bi2Te3 crystals
    Liang, Chaolun
    Liu, Lin
    Li, Hui
    Qian, Dong
    Liu, Canhua
    Jia, Jinfeng
    Chen, Jian
    MATERIALS CHARACTERIZATION, 2016, 114 : 172 - 178
  • [7] Magnetic properties of erbium in single crystal Bi2Te3
    Kim, Y. H.
    Yeom, T. H.
    Eguchi, H.
    Seidel, G. M.
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2007, 310 (02) : 1703 - 1705
  • [8] Electrical and thermoelectric properties of single-wall carbon nanotube doped Bi2Te3
    Zhang, Y.
    Wang, X. L.
    Yeoh, W. K.
    Zheng, R. K.
    Zhang, C.
    APPLIED PHYSICS LETTERS, 2012, 101 (03)
  • [9] Infrared electrodynamics and ferromagnetism in the topological semiconductors Bi2Te3 and Mn-doped Bi2Te3
    Chapler, B. C.
    Post, K. W.
    Richardella, A. R.
    Lee, J. S.
    Tao, J.
    Samarth, N.
    Basov, D. N.
    PHYSICAL REVIEW B, 2014, 89 (23)
  • [10] Features of the charge-transport mechanism in layered Bi2Te3 single crystals doped with chlorine and terbium
    N. A. Abdullaev
    N. M. Abdullaev
    H. V. Aliguliyeva
    T. G. Kerimova
    G. S. Mehdiyev
    S. A. Nemov
    Semiconductors, 2011, 45 : 37 - 42
12345