Electronic structure of uranium overlayers on magnesium and aluminium

被引:27
|
作者
Gouder, T
机构
[1] Commn. of the European Communities, Joint Research Center, Institute for Transuranium Elements, Postfach 2340
关键词
aluminum; growth; magnesium; photoelectron spectroscopy; polycrystalline thin film; sputter deposition; surface electronic phenomena; uranium;
D O I
10.1016/S0039-6028(97)00088-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We studied U overlayers on polycrystalline Mg and Al by X-ray and ultra-violet photoelectron spectroscopies ( XPS and UPS, respectively), and compared the mode of growth and the evolution of the electronic structure as a function of coverage. The goal of this work was to detect localization, or at least correlation effects. in U overlayers and U substrate near surface alloys, which were expected to occur because of the reduced U 5f bandwidth in these systems. On Mp, U deposits as a pure overlayer without any interdiffusion. while oil Al spontaneous interdiffusion takes place. The U 4f spectra of U/Mg show only weak correlation satellites. Nevertheless, the asymmetrical shape of the U 4f peak indicates 5f band narrowing. On Al, strong correlation satellites are observed in addition to plasmon loss features. It seems that U-substrate interactions promote correlation effects, while the reduced coordination in overlayers plays a less important role. UPS valence-band (VB) spectra of the two systems look remarkably similar. They do not show any correlation satellites. With decreasing overlayer thickness the 5f peak narrows, which is. attributed to 5f band narrowing at the surface, (C) 1997 Elsevier Science B,V.
引用
收藏
页码:26 / 34
页数:9
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