Novel Magnetic Burn-In for Retention Testing of STTRAM

被引：0

作者：

Khan, Mohammad Nasim Imtiaz ^{[1
]}

Iyengar, Anirudh S. ^{[1
]}

Ghosh, Swaroop ^{[1
]}

机构：

[1] Penn State Univ, Sch Elect Engn & Comp Sci, University Pk, PA 16801 USA

来源：

PROCEEDINGS OF THE 2017 DESIGN, AUTOMATION & TEST IN EUROPE CONFERENCE & EXHIBITION (DATE) | 2017年

关键词：

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Spin-Transfer Torque RAM (STTRAM) is an emerging Non-Volatile Memory (NVM) technology that has drawn significant attention due to complete elimination of bitcell leakage. However, it brings new challenges in characterizing the retention time of the array during test. Significant shift of retention time under static (process variation (PV)) and dynamic (voltage, temperature fluctuation) variability furthers this issue. In this paper, we propose a novel magnetic burn-in (MBI) test which can be implemented with minimal changes in the existing test flow to enable STTRAM retention testing at short test time. The magnetic burn-in is also combined with thermal burn-in (MBI+BI) for further compression of retention and test time. Simulation results indicate MBI with 220Oe (at 25C) can improve the test time by 3.71x10(13) X while MBI+BI with 220Oe at 125C can improve the test time by 1.97x10(14)X.

引用

页码：666 / 669

页数：4

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