Tailoring sample-wide pseudo-magnetic fields on a graphene-black phosphorus heterostructure

被引：139

作者：

Liu, Yanpeng ^{[1
,2
,3
]}

Rodrigues, J. N. B. ^{[2
,3
,4
]}

Luo, Yong Zheng ^{[4
]}

Li, Linjun ^{[1
,2
,3
]}

Carvalho, Alexandra ^{[2
,3
,4
]}

Yang, Ming ^{[2
,3
,4
,5
]}

Laksono, Evan ^{[2
,3
,4
]}

Lu, Junpeng ^{[2
,3
,4
]}

Bao, Yang ^{[1
,2
,3
]}

Xu, Hai ^{[1
,2
,3
]}

Tan, Sherman J. R. ^{[1
,6
]}

Qiu, Zhizhan ^{[6
]}

Sow, Chorng Haur ^{[2
,3
,4
]}

Feng, Yuan Ping ^{[2
,3
,4
]}

Castro Neto, A. H. ^{[2
,3
,4
]}

Adam, Shaffique ^{[2
,3
,4
,7
]}

Lu, Jiong ^{[1
,2
,3
]}

Loh, Kian Ping ^{[1
,2
,3
]}

机构：

[1] Natl Univ Singapore, Dept Chem, Singapore, Singapore

[2] Natl Univ Singapore, Ctr Adv Mat 2D, Singapore, Singapore

[3] Natl Univ Singapore, Graphene Res Ctr, Singapore, Singapore

[4] Natl Univ Singapore, Dept Phys, Singapore, Singapore

[5] Inst Mat Res & Engn, Agcy Sci Res & Technol, Singapore, Singapore

[6] Natl Univ Singapore, NUS Grad Sch Integrat Sci & Engn, Singapore, Singapore

[7] Yale NUS Coll, Singapore, Singapore

来源：

NATURE NANOTECHNOLOGY | 2018年 / 13卷 / 09期

关键词：

2-DIMENSIONAL ELECTRON-GAS; DIRAC FERMIONS; SPECTROSCOPY; TRANSITION;

D O I：

10.1038/s41565-018-0178-z

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Spatially tailored pseudo-magnetic fields (PMFs) can give rise to pseudo-Landau levels and the valley Hall effect in graphene. At an experimental level, it is highly challenging to create the specific strain texture that can generate PMFs over large areas. Here, we report that superposing graphene on multilayer black phosphorus creates shear-strained superlattices that generate a PMF over an entire graphene-black phosphorus heterostructure with edge size of tens of micrometres. The PMF is intertwined with the spatial period of the moire pattern, and its spatial distribution and intensity can be modified by changing the relative orientation of the two materials. We show that the emerging pseudo-Landau levels influence the transport properties of graphene-black phosphorus field-effect transistor devices with Hall bar geometry. The application of an external magnetic field allows us to enhance or reduce the effective field depending on the valley polarization with the prospect of developing a valley filter.

引用

页码：828 / +

页数：8

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