Photoelectric properties of n-CdS/p-InP heterojunctions

The polarization method for studying photoactive absorption is used to investigate the photoconversion processes in CdS/InP heterojunctions asa function of the orientation of the indium phosphide substrate. The results of these investigations demonstrate the sensitivity of the photoelectric processes to several factors, including the crystallographic orientation of the p-type InP substrate and the optical quality of the CdS layer. The induced photopleochroism coefficient of these heterojunctions increases proportionally to the square of the angle of incidence (P-I similar to Theta(2)). Such CdS/InP heterojunctions can be employed as polarization-photosensitive devices. (C) 1998 American Institute of Physics.