Growth of SiC nanostructures on si (100) using low energy carbon ion implantation and electron beam rapid thermal annealing

被引：1

作者：

Markwitz, A. ^{[1
]}

Johnson, S. ^{[1
]}

Rudolphi, M. ^{[1
]}

Baumann, H. ^{[1
]}

机构：

[1] Rafter Res Lab, Inst Geol & Nucl Sci, Lower Hutt, New Zealand

来源：

INTERNATIONAL JOURNAL OF NANOSCIENCE, VOL 3, NOS 4 AND 5 | 2004年 / 3卷 / 4-5期

关键词：

SiC; nanostructures; ion implantation; electron beam annealing; SiC on Si;

D O I：

10.1142/S0219581X04002218

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A combination of 10 keV C-13 low energy ion implantation and electron beam rapid thermal annealing (EB-RTA) is used to fabricate silicon carbide nanostructures on (100) silicon surfaces. These large ellipsoidal features appear after EB-RTA at 1000 degrees C for 15 s. Prior to annealing, the silicon surfaces are virgin-like flat. Atomic force microscopy was used to study the morphology of these structures and it was found that the diameter and number of nanoboulders are linearly dependent on the implantation fluence. Further, a linear relationship between nanoboulder diameter and spacing suggests crystal coarsening is a fundamental element in the growth mechanism.

引用

页码：425 / 430

页数：6

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