Light-valley interactions in 2D semiconductors

被引：350

作者：

Mak, Kin Fai ^{[1
,2
,3
]}

Xiao, Di ^{[4
]}

Shan, Jie ^{[1
,2
,3
]}

机构：

[1] Cornell Univ, Dept Phys, Ithaca, NY 14853 USA

[2] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA

[3] Kavli Inst Cornell Nanoscale Sci, Ithaca, NY 14853 USA

[4] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA

来源：

NATURE PHOTONICS | 2018年 / 12卷 / 08期

基金：

美国国家科学基金会;

关键词：

MONOLAYER MOS2; DARK EXCITONS; SPIN; POLARIZATION; GENERATION; COHERENCE; TRANSPORT; FIELD; WSE2; FERROMAGNETISM;

D O I：

10.1038/s41566-018-0204-6

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The emergence of two-dimensional Dirac materials, particularly transition metal dichalcogenides (TMDs), has reinvigorated interest in valleytronics, which utilizes the electronic valley degree of freedom for information storage and processing. Here, we review the basic valley-dependent properties and their experimental demonstrations in single-layer semiconductor TMDs with an emphasis on the effects of band topology and light-valley interactions. We also provide a brief summary of the recent advances on controlling the valley degree of freedom in TMDs with light and other means for potential applications.

引用

收藏

页码：451 / 460

页数：10

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