Redistribution of boron in silicon after Ne+ postirradiation and thermal annealing

被引:1
作者
Fink, D
Szimkowiak, P
Hu, XW
Hnatowicz, V
Vacik, J
Chadderton, LT
机构
[1] Hahn Meitner Inst Kernforsch Berlin GmbH, D-14109 Berlin, Germany
[2] Chinese Inst Atom Energy, Beijing, Peoples R China
[3] Acad Sci Czech Republ, Inst Nucl Phys, CZ-25068 Rez, Czech Republic
[4] Australian Natl Univ, Res Sch Phys Sci & Engn, Canberra, ACT 2601, Australia
[5] CSIRO, Div Appl Phys, Lindfield, NSW 2070, Australia
来源
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 2000年 / 152卷 / 01期
关键词
boron; silicon; neon; implantation; furnace annealing; neutron depth profiling; range distributions; radiation enhanced diffusion; surface precipitation; computer simulation; intersticialcy mechanism;
D O I
10.1080/10420150008211815
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
Silicon wafers were implanted with 200 keV B+ ions up to 5 x 10(14) cm(-2) fluence, then postirradiated with 75-650 keV Ne+ ions at different fluences up to a near-constant damage level, and finally furnace annealed up to 500 degrees C. The change in the boron depth distribution at each step is recorded by means of neutron depth profiling, and compared with theoretical simulations. It turns out that the postirradiation releases the majority of all boron atoms from their initial implantation sites already at ambient temperature and quite low fluence, whereas subsequent thermal annealing is of minor importance. The diffusion coefficient of the boron radiation enhanced mobility is found to decrease steadily with increasing postirradiation fluence. These new data are compared with other results from literature.
引用
收藏
页码:67 / 86
页数:20
相关论文
共 29 条
  • [1] NEW MODEL FOR BORON-DIFFUSION IN SILICON
    ANDERSON, JR
    GIBBONS, JF
    [J]. APPLIED PHYSICS LETTERS, 1976, 28 (04) : 184 - 186
  • [2] [Anonymous], IEEE T ELECT DEVICES
  • [3] [Anonymous], 1975, IMPLANTATION BORON L
  • [4] REDISTRIBUTION OF BORON IN SILICON AFTER HIGH-TEMPERATURE PROTON IRRADIATION
    BARUCH, P
    MONNIER, J
    BLANCHARD, B
    CASTAING, C
    [J]. APPLIED PHYSICS LETTERS, 1975, 26 (03) : 77 - 80
  • [5] A MONTE-CARLO COMPUTER-PROGRAM FOR THE TRANSPORT OF ENERGETIC IONS IN AMORPHOUS TARGETS
    BIERSACK, JP
    HAGGMARK, LG
    [J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 174 (1-2): : 257 - 269
  • [6] NEW PROJECTED RANGE ALGORITHM AS DERIVED FROM TRANSPORT-EQUATIONS
    BIERSACK, JP
    [J]. ZEITSCHRIFT FUR PHYSIK A-HADRONS AND NUCLEI, 1982, 305 (02): : 95 - 101
  • [7] BIERSACK JP, 1992, COMMUNICATION
  • [8] CHU A, 1977, ION IMPLANTATION SEM, P711
  • [9] NEUTRON DEPTH PROFILING - OVERVIEW AND DESCRIPTION OF NIST FACILITIES
    DOWNING, RG
    LAMAZE, GP
    LANGLAND, JK
    HWANG, ST
    [J]. JOURNAL OF RESEARCH OF THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY, 1993, 98 (01) : 109 - 126
  • [10] Fink D, 1996, APPL PHYS A-MATER, V62, P359