Resonant excitation of microwave acoustic modes in n-GaAs film

被引：0

作者：

Grimalsky, V ^{[1
]}

Gutierrez-D, E

Garcia-B, A

Koshevaya, S

机构：

[1] INAOE, Dept Elect, Puebla 72000, Mexico

[2] Autonomous Univ Morelos, CIICAp, Cuernavaca 62210, Morelos, Mexico

来源：

16TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Resonant excitation of coupled space charge - acoustic waves in thin n-GaAs film is theoretically investigated. Possible mechanisms of electroacoustic coupling are piezoeffect and deformation potential. The film is placed onto a substrate i-GaAs without an acoustic contact. The film includes two-dimensional electron gas with a high negative differential conductivity. A possibility of resonant excitation of acoustic modes of the film at the,first and the second harmonic of input microwave signal has been demonstrated.

引用

页码：72 / 75

页数：4

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