Structural and photoluminescent properties of porous silicon with deep pores obtained by laser-assisted electrochemistry

被引：3

作者：

Baranauskas, V ^{[1
]}

Li, BB ^{[1
]}

Tosin, MC ^{[1
]}

Zhao, JG ^{[1
]}

Ceragioli, HJ ^{[1
]}

Peterlevitz, AC ^{[1
]}

Durrant, SF ^{[1
]}

机构：

[1] Univ Estadual Campinas, Fac Engn Eletr & Comp, Dept Semicond Instrumentos & Fonton, BR-13083970 Campinas, SP, Brazil

来源：

SURFACE & COATINGS TECHNOLOGY | 2000年 / 133卷

基金：

巴西圣保罗研究基金会;

关键词：

porous silicon; laser electrochemistry; photoluminescent spectroscopy;

D O I：

10.1016/S0257-8972(00)00950-6

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Columnar porous silicon (PS) with deep pores has been prepared by laser-assisted electrochemistry of n-type c-Si wafers immersed in HF/C2H5OH/H2O mixtures of different proportions. Analysis of the PS by micro-Raman spectroscopy was undertaken simultaneously with micro-photoluminescence spectroscopy to enable correlation of the characteristics of the luminescence spectra with the probable emission structures. In addition, the cross-sectional surfaces of the samples were studied by micro-Raman and micro-photoIuminescence spectroscopy to compare the luminescence of the structures present in the bulk of the PS with that of the structures of the top surface. The results suggest that the strong luminescence observed in these PS films originates from structures present in the bulk of the PS, and not from surface structures. Morphological data obtained by scanning electron microscopy (SEM) and atomic force microscopy (AFM) are also discussed. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：325 / 330

页数：6

共 12 条

[1] LASER-INDUCED CHEMICAL VAPOR-DEPOSITION OF POLYCRYSTALLINE SI FROM SICL4 [J].