Al doping of 4H-SiC by laser irradiation to coated Al film and its application to junction barrier Schottky diode

被引：5

作者：

Ikeda, Akihiro ^{[1
]}

Sumina, Rikuho ^{[1
]}

Ikenoue, Hiroshi ^{[1
]}

Asano, Tanemasa ^{[1
]}

机构：

[1] Kyushu Univ, Grad Sch Informat Sci & Elect Engn, Fukuoka 8190395, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 04期

关键词：

INDUCED PLASMA; ELECTRICAL ACTIVATION; SILICON-CARBIDE; ALUMINUM; IMPLANTATION; SI; SPECTROSCOPY; VACUUM; IONS; FACE;

D O I：

10.7567/JJAP.55.04ER07

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Aluminum (Al) is doped into 4H-SiC by excimer laser irradiation to a coated Al film on the 4H-SiC surface. Deep (similar to 200 nm in the depth) and high-concentration (over 1 x 10(21)/cm(3) on the surface) Al doping is realized by adjusting the Al film thickness for the laser fluence. Optical emission measurements clearly show that Al plasma is generated on and above the sample surface by laser irradiation. Surface morphology observation suggests that, under an optimum combination between Al thickness and laser fluence, high-temperature molten Al is formed on the 4H-SiC surface and the molten Al serves as the dopant source. We adopt this laser Al doping to fabricate a junction barrier Schottky (JBS) diode. Selective doping is performed by using SiO2 as the doping mask. The fabrication is thoroughly carried out without heating the substrate except for film deposition and metal sintering processes. The fabricated JBS diode shows satisfactory operation as compared with a pn junction diode. (C) 2016 The Japan Society of Applied Physics

引用

页数：6

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