Electronic structure of α-Ga -: art. no. 205105

被引：5
作者：
Sondergaard, C [1 ]
Schultz, C
Agergaard, S
Li, H
Li, Z
Hoffmann, SV
Grütter, C
Bilgram, JH
Hofmann, P
机构：
[1] Aarhus Univ, Inst Storage Ring Facil, DK-8000 Aarhus C, Denmark
[2] ETH, Festkorperphys Lab, CH-8093 Zurich, Switzerland
来源：
PHYSICAL REVIEW B | 2003年 / 67卷 / 20期
关键词：
D O I：
10.1103/PhysRevB.67.205105
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have determined the electronic structure of alpha-Ga using angle-resolved photoemission from the alpha-Ga(010) surface. Data were collected both at 78 K and at 273 K, i.e., below and above the temperature of the surface phase transition. We observe a number of relatively flat bands reflecting the partly covalent character of alpha-Ga. Our results agree fairly well with recent band-structure calculations.
引用
收藏
页数：5
相关论文
共 20 条
  • [1] ELECTRONIC-STRUCTURES OF GALLIUM AND INDIUM ACROSS THE SOLID-LIQUID TRANSITION
    BARMAN, SR
    SARMA, DD
    [J]. PHYSICAL REVIEW B, 1995, 51 (07): : 4007 - 4013
  • [2] THE (001) SURFACE OF ALPHA-GA IS COVERED WITH GA-III
    BERNASCONI, M
    CHIAROTTI, GL
    TOSATTI, E
    [J]. PHYSICAL REVIEW LETTERS, 1993, 70 (21) : 3295 - 3298
  • [3] AB-INITIO CALCULATIONS OF STRUCTURAL AND ELECTRONIC-PROPERTIES OF GALLIUM SOLID-STATE PHASES
    BERNASCONI, M
    CHIAROTTI, GL
    TOSATTI, E
    [J]. PHYSICAL REVIEW B, 1995, 52 (14): : 9988 - 9998
  • [4] THEORY OF THE STRUCTURAL AND ELECTRONIC-PROPERTIES OF ALPHA-GA(001) AND (010) SURFACES
    BERNASCONI, M
    CHIAROTTI, GL
    TOSATTI, E
    [J]. PHYSICAL REVIEW B, 1995, 52 (14): : 9999 - 10013
  • [5] ALPHA-GALLIUM - A METALLIC MOLECULAR-CRYSTAL
    GONG, XG
    CHIAROTTI, GL
    PARRINELLO, M
    TOSATTI, E
    [J]. PHYSICAL REVIEW B, 1991, 43 (17): : 14277 - 14280
  • [6] CONDUCTION ELECTRONS IN SOLID AND LIQUID GALLIUM
    GREUTER, F
    OELHAFEN, P
    [J]. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1979, 34 (02): : 123 - 128
  • [7] CRYSTAL STRUCTURE OF GALLIUM METAL
    HEINE, V
    [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1968, 1 (01): : 222 - &
  • [8] Hoffmann S., UNPUB
  • [9] Unexpected surface sensitivity at high energies in angle-resolved photoemission
    Hofmann, P
    Sondergaard, C
    Agergaard, S
    Hoffmann, SV
    Gayone, JE
    Zampieri, G
    Lizzit, S
    Baraldi, A
    [J]. PHYSICAL REVIEW B, 2002, 66 (24): : 1 - 5
  • [10] Electron-lattice interaction on α-Ga(010)
    Hofmann, P
    Cai, YQ
    Grutter, C
    Bilgram, JH
    [J]. PHYSICAL REVIEW LETTERS, 1998, 81 (08) : 1670 - 1673
12