On Optimum Designs of a RCE Si/SiGe/Si MQW Photodetector for long wavelength applications

被引：0
|
作者：
Das, Mukul K. [1 ]
Das, N. R. [2 ]
机构：
[1] ISM Univ, Dept Elect & Instrumentat, Dhanbad, Bihar, India
[2] Univ Calcutta, Inst Radio Phys & Elect, Kolkata, W Bengal, India
来源：
NUSOD 2009: 9TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES, PROCEEDINGS | 2009年
关键词：
D O I：
10.1109/NUSOD.2009.5297210
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In the present paper, performance analysis of a resonant-cavity-enhanced Si/Si1-yGey/Si multiple quantum well photodetector has been carried out. The effects of material parameters of active Si1-yGey layers and carrier trapping by the potential barriers at the heterointerfaces of Si/Si1-yGey/Si quantum wells on the bandwidth (BW) and responsivity of the detector have been investigated using numerical simulation. Results on possible optimum designs of the photodetector have been suggested to maximize responsivity-BW product..
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页码：87 / +
页数：2
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