Ti4+ modified MgZrNb2O8 microwave dielectric ceramics with an ultra-high quality factor

Ti4+-modified MgZrNb2O8 (MgZr1-xTixNb2O8, x = 0, 0.1, 0.2, 0.3, 0.4) ceramics were synthesized using the traditional solid-state reaction method. Pure MgZr1-xTixNb2O8 was detected without any secondary phase via the X-ray diffraction patterns. According to the sintering behavior and the surface morphology results, the introduction of Ti4+ reduced the sintering temperature and promoted the grain growth. The correlations between the dielectric properties and the crystal structure were analyzed through the Rietveld refinement and Raman spectroscopy. The slight shifts of the Raman peaks, corresponding to different vibration modes, were induced by the substitution of Ti4+ for Zr4+ and related to the improved quality factor. In general, the sample of MgZr0.9Ti0.1Nb2O8 sintered at 1320 degrees C for 4 h exhibited promising microwave dielectric properties with an ultra-high Q x f value of 130 123 GHz (at 7.308 GHz, 20 degrees C), which is potential for 5G communication applications.