A 850/900/1800/190OMHz quad-band CMOS medium power amplifier

被引：0
|
作者：
Aniktar, Huseyin [1 ]
Sjoland, Henrik [2 ]
Mikkelsen, Jan H. [1 ]
Larsen, Torben [1 ]
机构：
[1] Aalborg Univ, Dept Commun Technol, RISC Div, Niels Jemes Vej 12, DK-9220 Aalborg, Denmark
[2] Lund Univ, Dep Electro sci, S-22100 Lund, Sweden
来源：
2006 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-4 | 2006年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a two-stage quad-band CMOS RF power amplifier. The power amplifier is fabricated in a 0.25 mu m CMOS process. The measured 1-dB compression point between 800 and 900 MHz is 15 dBm +/- 0.2 dB with maximum 18% PAE, and between 1800 and 1900MHz is 17.5dBm +/- 0.7dB with maximum 17% PAE. The measured gains in the two bands are 23.6dB +/- 0.7dB and 13dB +/- 2.1dB, respectively.
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页码：448 / +
页数：2
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