GaN nanorods doped by hydride vapor-phase epitaxy: Optical and electrical properties

被引：11

作者：

Kim, HM ^{[1
]}

Cho, YH

Kang, TW

机构：

[1] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea

[2] Chungbuk Natl Univ, Dept Phys, Cheongju 361763, South Korea

来源：

ADVANCED MATERIALS | 2003年 / 15卷 / 03期

关键词：

D O I：

10.1002/adma.200390053

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Exciting opportunities in nanoscale technology could be made available thanks to this first report of doping GaN nanorods to create p- and n-type materials. Controlled doping of the nanorods is achieved by hydride vapor-phase epitaxy, and they are characterized optically and electrically. The Figure shows a scanning electron microscopy image of a nanorod field-effect transistor (scale bar is 10 mum).

引用

页码：232 / +

页数：5

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