Response to "Comment on 'Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy'" [Appl. Phys. Lett. 90, 116102 (2007)]

被引：7
作者：
Xiu, F. X. [1 ]
Liu, J. L. [1 ]
机构：
[1] Univ Calif Riverside, Dept Elect Engn, Quantum Struct Lab, Riverside, CA 92521 USA
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 11期
关键词：
D O I：
10.1063/1.2713174
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页数：2
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[1]   Photoluminescence studies in ZnO samples [J].
Boemare, C ;
Monteiro, T ;
Soares, MJ ;
Guilherme, JG ;
Alves, E .
PHYSICA B-CONDENSED MATTER, 2001, 308 :985-988
[2]   Study of the photoluminescence of phosphorus-doped p-type ZnO thin films grown by radio-frequency magnetron sputtering -: art. no. 151917 [J].
Hwang, DK ;
Kim, HS ;
Lim, JH ;
Oh, JY ;
Yang, JH ;
Park, SJ ;
Kim, KK ;
Look, DC ;
Park, YS .
APPLIED PHYSICS LETTERS, 2005, 86 (15) :1-3
[3]   Raman scattering and photoluminescence of As ion-implanted ZnO single crystal [J].
Jeong, TS ;
Han, MS ;
Youn, CJ ;
Park, YS .
JOURNAL OF APPLIED PHYSICS, 2004, 96 (01) :175-179
[4]   Luminescence of bound excitons in epitaxial ZnO thin films grown by plasma-assisted molecular beam epitaxy [J].
Jung, YS ;
Choi, WK ;
Kononenko, OV ;
Panin, GN .
JOURNAL OF APPLIED PHYSICS, 2006, 99 (01)
[5]   Optical characteristics of arsenic-doped ZnO nanowires [J].
Lee, W ;
Jeong, MC ;
Myoung, JM .
APPLIED PHYSICS LETTERS, 2004, 85 (25) :6167-6169
[6]   P-type doping and devices based on ZnO [J].
Look, DC ;
Claftin, B .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2004, 241 (03) :624-630
[7]   The path to ZnO devices: donor and acceptor dynamics [J].
Look, DC ;
Jones, RL ;
Sizelove, JR ;
Garces, NY ;
Giles, NC ;
Halliburton, LE .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2003, 195 (01) :171-177
[8]   Bound exciton and donor-acceptor pair recombinations in ZnO [J].
Meyer, BK ;
Alves, H ;
Hofmann, DM ;
Kriegseis, W ;
Forster, D ;
Bertram, F ;
Christen, J ;
Hoffmann, A ;
Strassburg, M ;
Dworzak, M ;
Haboeck, U ;
Rodina, AV .
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2004, 241 (02) :231-260
[9]   p-Type conduction in phosphorus-doped ZnO thin films by MOCVD and thermal activation of the dopant [J].
Miao, Yan ;
Ye, Zhizhen ;
Xu, Weizhong ;
Chen, Fugang ;
Zhou, Xincui ;
Zhao, Binghui ;
Zhu, Liping ;
Lu, Jianguo .
APPLIED SURFACE SCIENCE, 2006, 252 (22) :7953-7956
[10]   Properties of arsenic-doped p-type ZnO grown by hybrid beam deposition [J].
Ryu, YR ;
Lee, TS ;
White, HW .
APPLIED PHYSICS LETTERS, 2003, 83 (01) :87-89
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