BN-Anthracene for High-Mobility Organic Optoelectronic Materials through Periphery Engineering

被引:71
作者
Li, Wanhui [1 ]
Du, Cheng-Zhuo [1 ]
Chen, Xing-Yu [1 ]
Fu, Lin [1 ]
Gao, Rong-Rong [1 ]
Yao, Ze-Fan [2 ]
Wang, Jie-Yu [2 ]
Hu, Wenping
Pei, Jian [2 ]
Wang, Xiao-Ye [1 ]
机构
[1] Nankai Univ, Coll Chem, State Key Lab Elementoorgan Chem, Tianjin 300071, Peoples R China
[2] Peking Univ, Coll Chem & Mol Engn, Ctr Soft Matter Sci & Engn,Beijing Natl Lab Mol S, Key Lab Bioorgan Chem & Mol Engn Minist Educ, Beijing 100871, Peoples R China
基金
中国国家自然科学基金; 国家重点研发计划;
关键词
Boron; Heterocycles; Organic Semiconductors; Polyarenes; Transistors; FIELD-EFFECT TRANSISTORS; HETEROAROMATIC-COMPOUNDS; REGIOSELECTIVE FUNCTIONALIZATION; PYRENE; SEMICONDUCTORS; REACTIVITY;
D O I
10.1002/anie.202201464
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Despite the remarkable synthetic accomplishments in creating diverse polycyclic aromatic hydrocarbons with B-N bonds (BN-PAHs), their optoelectronic applications have been less exploited. Herein, we report the achievement of high-mobility organic semiconductors based on existing BN-PAHs through a "periphery engineering" strategy. Tetraphenyl- and diphenyl-substituted BN-anthracenes (TPBNA and DPBNA, respectively) are designed and synthesized. DPBNA exhibits the highest hole mobility of 1.3 cm(2) V-1 s(-1) in organic field-effect transistors, significantly outperforming TPBNA and all the reported BN-PAHs. Remarkably, this is the first BN-PAH with mobility over 1 cm(2 )V(-1) s(-1), which is a benchmark value for practical applications as compared with amorphous silicon. Furthermore, high-performance phototransistors based on DPBNA are also demonstrated, implying the high potential of BN-PAHs for optoelectronic applications when the "periphery engineering" strategy is implemented.
引用
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页数:6
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