Interface atomic structure and magnetic anisotropy in ultrathin Fe films grown by thermal deposition and pulsed laser deposition on GaAs(001)

被引:10
作者
Kardasz, B.
Zukrowski, J.
Mosendz, O.
Przybylski, M.
Heinrich, B.
Kirschner, J.
机构
[1] Simon Fraser Univ, Burnaby, BC V5A 1S6, Canada
[2] AGH Univ Sci & Technol, PL-30059 Krakow, Poland
[3] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
关键词
D O I
10.1063/1.2711071
中图分类号
O59 [应用物理学];
学科分类号
摘要
Thermal deposition (TD) and pulsed laser deposition (PLD) techniques were used to prepare GaAs/Fe(001) crystalline ultrathin films. The magnetic environment of Fe at the Fe/GaAs(001) interface was investigated by means of conversion electron Mossbauer spectroscopy using an (57)Fe probe layer having the equivalent thickness of two atomic layers. The magnetic anisotropies were measured using ferromagnetic resonance. PLD samples were affected by an appreciably higher degree of interface alloying compared with the TD films. The interface in-plane fourfold (cubic) anisotropy is significantly increased and the in-plane interface uniaxial anisotropy is significantly decreased in the PLD samples compared to those prepared using TD. The effective perpendicular demagnetizing field in the PLD films is significantly decreased compared to the TD samples due to an unexpected increase in the interface uniaxial perpendicular anisotropy at the Fe/Au(001) interface.
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页数:3
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