High-speed, low-power InSb transistors

被引：21

作者：

Ashley, T ^{[1
]}

Dean, AB ^{[1
]}

Elliott, CT ^{[1
]}

Jefferies, R ^{[1
]}

Khaleque, F ^{[1
]}

Phillips, TJ ^{[1
]}

机构：

[1] Def Evaluat & Res Agcy, Malvern WR14 3PS, Worcs, England

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650491

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-speed, low-power consumption field-effect transistors fabricated from InSb/In1-xAlxSb are demonstrated. A 0.7 mu m gate-length enhancement-mode device shows an f(T) of 74 GHz, and an f(max) of 89 GHz, at a drain voltage below 0.5 V. This is the fastest reported transistor for its gate length, as far as is known.

引用

页码：751 / 754

页数：4