Lateral spread of tungsten ions implanted in silicon

被引：1
|
作者：
Liang, JH [1 ]
机构：
[1] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 30043, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 3A期
关键词：
ion implantation; projected range; longitudinal range straggling; transverse range straggling; secondary ion mass spectrometry;
D O I：
10.1143/JJAP.37.742
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Silicon wafers were irradiated at tilted geometry to measure the lateral spread of tungsten ions in silicon for implantation energies between 40 and 360 keV. The depth profiles of implanted tungsten ions were measured by means of secondary ion mass spectrometry. The measured transverse range stragglings were obtained by using Furukawa and Matsumura's formula. An analysis of the measured transverse range stragglings as compared to the values calculated from the Biersack theory and SRIM reveals that the calculated transverse range stragglings from the Biersack theory correlated closer to the measured ones.
引用
收藏
页码：742 / 744
页数：3
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