Analysis of the spectral response of silicon solar cells irradiated with high fluence electrons/protons

被引：2

作者：

Imaizumi, M ^{[1
]}

Taylor, SJ ^{[1
]}

Yamaguchi, M ^{[1
]}

Hisamatsu, T ^{[1
]}

Matsuda, S ^{[1
]}

Kawasaki, O ^{[1
]}

机构：

[1] Toyota Technol Inst, Tempaku Ku, Nagoya, Aichi 468, Japan

来源：

CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997 | 1997年

关键词：

D O I：

10.1109/PVSC.1997.654253

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

An anomalous change in the spectral response of Si space solar cells induced by high fluence irradiation has been observed. We have modeled the spectral response to account for radiation induced changes in the cell structure using the device simulator PC1D [1]. According to the modeled results, the junction depth increases when rapid degradation of the cell occurs, probably due to indiffusion of phosphorus from the emitter. Also, the weak infra-red spectral response after cell failure has been explained by conduction type conversion of the base layer from p-type to n-type due to the introduction of donor like defects. This conduction type conversion has been confirmed by cross-sectional electron beam induced current (EBIC).

引用

页码：983 / 986

页数：4