High-In-content InGaAs quantum point contacts fabricated using focused ion beam system equipped with N2 gas field ion source

被引：2

作者：

Akabori, Masashi ^{[1
]}

Hidaka, Shiro ^{[1
]}

Yamada, Syoji ^{[1
]}

Kozakai, Tomokazu ^{[2
]}

Matsuda, Osamu ^{[2
]}

Yasaka, Anto ^{[2
]}

机构：

[1] Japan Adv Inst Sci & Technol, Ctr Nano Mat & Technol, Nomi, Ishikawa 9231292, Japan

[2] Hitachi High Tech Sci Corp, Oyama, Shizuoka 4101393, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 11期

关键词：

SPIN-ORBIT INTERACTION; QUANTIZED CONDUCTANCE; TRANSPORT; HETEROJUNCTIONS; HETEROSTRUCTURE;

D O I：

10.7567/JJAP.53.118002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Quantum point contacts (QPCs) in high-In-content InGaAs modulation-doped heterostructures fabricated using a focused ion beam (FIB) system equipped with a N-2 gas field ion source (GFIS) are demonstrated. The minimum physical size of the fabricated QPCs in this study is similar to 30 nm, which is smaller than the typical physical size of QPCs (>50 nm) obtained by electron beam lithography and etching techniques. In addition, the fabricated QPCs are characterized electrically at low temperatures with magnetic fields. Since some of them show conductance quantization behaviors, the results indicate that the GFIS-FIB process is promising for quantum device fabrication. (C) 2014 The Japan Society of Applied Physics.

引用

页数：3