Effect of dielectric barrier discharge on semiconductor Si electrode surface

被引：11

作者：

Wang, Changquan ^{[1
]}

Zhang, Guixin ^{[1
]}

He, Xiangning ^{[2
]}

机构：

[1] Tsinghua Univ, Dept Elect Engn, Beijing 100084, Peoples R China

[2] Zhejiang Univ, Coll Elect Engn, Hangzhou 310027, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2010年 / 256卷 / 20期

关键词：

Dielectric barrier discharge; Semiconductor electrode; Air plasma; Power supply; GLOW-DISCHARGE; PLASMA; MODEL;

D O I：

10.1016/j.apsusc.2010.03.117

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Electrode materials and shapes affected the discharge modes. Meanwhile, the discharge has influence upon electrode surface. In order to study the effect of discharge on semiconductor electrode, the experiments were carried out using single crystal Si wafer as high voltage electrode of atmospheric pressure dielectric barrier discharge in air. The effects of dielectric barrier discharge on Si electrode surface are analyzed by means of field emission scanning electron microscope (FESEM) and X-ray photoelectron spectroscopy (XPS). The results show that surface roughness and oxidation increase with discharge time, while surface nitridation is not observed on Si electrode surface. It is different from Cu electrode. The difference is due to different chemical reactions between electrode surface and air plasma but could also be ascribed to the different analysis techniques used. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：6047 / 6052

页数：6

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