Ultimate nano-electronics: New materials and device concepts for scaling nano-electronics beyond the Si roadmap

被引：33

作者：

Collaert, N. ^{[1
]}

Alian, A. ^{[1
]}

Arimura, H. ^{[1
]}

Boccardi, G. ^{[1
]}

Eneman, G. ^{[1
]}

Franco, J. ^{[1
]}

Ivanov, Ts. ^{[1
]}

Lin, D. ^{[1
]}

Loo, R. ^{[1
]}

Merckling, C. ^{[1
]}

Mitard, J. ^{[1
]}

Pourghaderi, M. A. ^{[1
]}

Rooyackers, R. ^{[1
]}

Sioncke, S. ^{[1
]}

Sun, J. W. ^{[1
]}

Vandooren, A. ^{[1
]}

Veloso, A. ^{[1
]}

Verhulst, A. ^{[1
]}

Waldron, N. ^{[1
]}

Witters, L. ^{[1
]}

Zhou, D. ^{[1
]}

Barla, K. ^{[1
]}

Thean, A. V. -Y. ^{[1
]}

机构：

[1] IMEC, Kapeldreef 75, Heverlee, Belgium

来源：

MICROELECTRONIC ENGINEERING | 2015年 / 132卷

关键词：

High mobility materials; FinFET; TFET; Nanowires; FIELD-EFFECT TRANSISTORS; GERMANIUM; PERFORMANCE; DESIGN; SEMICONDUCTOR; PASSIVATION; TECHNOLOGY; MOBILITY;

D O I：

10.1016/j.mee.2014.08.005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we will give an overview of the innovations in materials and new device concepts that will be needed to continue Moore's law to the sub-10 nm technology nodes. To meet the power and performance requirements high mobility materials in combination with new device concepts like tunnel FETs and gate-all-around devices will need to be introduced. As the density is further increased and it becomes increasingly difficult to put contacts, spacers and gate in the available gate pitch, disruptive integration schemes such as vertical transistors and monolithic 3D integration might lead the way to the ultimate scaling of CMOS. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：218 / 225

页数：8

共 80 条

[1] Ammonium sulfide vapor passivation of In0.53Ga0.47As and InP surfaces
Alian, Alireza
Brammertz, Guy
Merckling, Clement
Firrincieli, Andrea
Wang, Wei-E
Lin, H. C.
Caymax, Matty
Meuris, Marc
De Meyer, Kristin
Heyns, Marc
[J]. APPLIED PHYSICS LETTERS, 2011, 99 (11)
[2] [Anonymous], 2012, VLSI TECHN S
[3] [Anonymous], 2010, IEDM, DOI DOI 10.1109/IEDM.2010.5703312
[4] [Anonymous], 2012, P S VER LARG SCAL IN
[5] [Anonymous], IEDM
[6] [Anonymous], 2013, IEDM
[7] [Anonymous], 2013, IEEE International Electron Devices Meeting, DOI DOI 10.1109/IEDM.2013.6724707
[8] [Anonymous], 2013, IEDM, DOI DOI 10.1109/IEDM.2013.6724639
[9] Barraud S, 2014, INT CONF ULTI INTEGR, P65, DOI 10.1109/ULIS.2014.6813907
[10] Batude P, 2011, IEEE INT SYMP CIRC S, P2233

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