Kelvin Probe Study of Dipole Formation and Annihilation at the HfO2/Si Interface

被引：15

作者：

Miyata, Noriyuki ^{[1
]}

Yasuda, Tetsuji ^{[1
]}

Abe, Yasuhiro ^{[2
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

[2] Tokyo City Univ, Grad Sch Engn, Setagaya Ku, Tokyo 1588557, Japan

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 05期

基金：

日本学术振兴会;

关键词：

KAPPA GATE DIELECTRICS; SURFACE; VOLTAGE; OXYGEN; LAYER;

D O I：

10.1143/APEX.3.054101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We used the Kelvin probe method to examine the dipole layers induced at the direct-contact HfO2/Si interfaces. Large negative voltage shifts of contact potential difference were observed for the HfO2/Si structures, indicating the existence of strong interface dipole layers (0.8-0.9 V). It was also found that the dipole strength decreased dramatically with ultrahigh vacuum annealing at about 600 degrees C, at which the interface Si-O bonds are likely to decompose. (C) 2010 The Japan Society of Applied Physics

引用

页数：3

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