A unified analytical Reliability model of NBTI and HCD for Undoped double gate PMOS

被引：0

作者：

Samy, Omnia ^{[1
]}

Abd Elhamid, Hamdy ^{[2
]}

Ismail, Yehea ^{[2
]}

Zekry, Abd El Halim ^{[1
]}

机构：

[1] ASU, Elect Engn, Cairo, Egypt

[2] AUC, CND, Cairo, Egypt

来源：

2017 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS) | 2017年

关键词：

negative bias temperature instability (NBTI); hot carrier degradation (HCD); 2D Poisson equation; nano MOSFETs; double-gate (DG); Reliability; Aging; short channel effects (SCEs); MOSFETS; DEGRADATION;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a simple analytical reliability model for potential and threshold voltage when negative bias temperature instability (NBTI) and hot carrier degradation (HCD) are included in double gate (DG) PMOS. The work is based on solving 2D Poisson equation for undoped DG PMOS. The effect of both reliability concerns on drain induced barrier lowering (DIBL) and threshold voltage roll-off is investigated. NBTI showed higher threshold voltage shift than HCD. On the other side HCD revealed 2 x higher DIBL values than NBTI, and may reach three times roll off voltage values higher than NBTI, at high drain voltages.

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页码：1986 / 1989

页数：4

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