Growth of ferromagnetic nanoparticles in Ge:Fe thin films -: art. no. 032509

被引：29

作者：

Goswami, R

Kioseoglou, G

Hanbicki, AT ^{[1
]}

van 't Erve, OMJ

Jonker, BT

Spanos, G

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] Geocenters Inc, Arlington, VA 22201 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 03期

关键词：

D O I：

10.1063/1.1854743

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The microstructure and magnetic properties of Ge:Fe thin films grown by molecular-beam epitaxy have been studied by transmission electron microscopy and superconducting quantum interference device magnetometry. Films were deposited on GaAs(001) at substrate temperatures (T-S) ranging from 70 to 400degreesC. Nanoparticles of ferromagnetic Fe3Ge2 form in a single-crystalline Ge matrix for T-S greater than or equal to 450degreesC. The evolution of magnetic order has been evaluated as the particle size increases from 2 nm at T-S = 150degreesC to 15 nm at 400degreesC. The ferromagnetic order of Ge:Fe nanocomposite thin films originates solely from ferromagnetic second-phase particles. (C) 2005 American Institute of Physics.

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页码：1 / 3

页数：3

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