Ternary BCN thin films deposited by reactive sputtering

被引：41

作者：

Yue, JS

Cheng, WJ

Zhang, XW

He, DY ^{[1
]}

Chen, GH

机构：

[1] Lanzhou Univ, Dept Phys, Lanzhou 730000, Peoples R China

[2] Beijing Polytech Univ, Dept Appl Phys, Beijing 100022, Peoples R China

来源：

THIN SOLID FILMS | 2000年 / 375卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

boron carbonitride; sputtering; Fourier transform infrared; X-ray photoelectron spectroscopy;

D O I：

10.1016/S0040-6090(00)01337-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ternary boron carbonitride (BCN) thin films were prepared by radio frequency reactive sputtering method from a hexagonal (h-) BN target in an Ar-CH4 discharge. The films with different C contents were obtained by varying the CH, partial pressure. The samples were characterized by X-ray diffraction, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy. The results suggest that the material is not a simple mixture of h-BN and graphite. The samples deposited under the optimum conditions are polycrystalline BC2N. With increasing CH, partial pressure, more B atoms prefer to combine with C atoms. The temperature dependent conductivity of the films deposited at 10% CH4 partial pressure follows the Arrhenius relation; the corresponding activation energy is approximately 0.8 eV. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：247 / 250

页数：4