共 55 条
Outstanding optical properties of thermally grown (Bi2Se3)1-x (Bi2Te3)x thin films
被引:10
作者:
Adam, A. M.
[1
,2
]
Diab, A. K.
[1
]
Tolan, Mohamed
[3
,4
]
El-Qahtani, Z. M. H.
[5
]
Refaat, A. A.
[2
,6
]
El-Hadek, Medhat A.
[2
,4
]
Elsehly, E. M.
[7
,8
]
El-Khouly, A.
[7
,8
]
Alharbi, Abdulaziz N.
[9
]
Khovaylo, V
[7
]
Ataalla, M.
[10
]
机构:
[1] Sohag Univ, Fac Sci, Phys Dept, Sohag 82524, Egypt
[2] King Salman Int Univ, Fac Engn, Sinai, Egypt
[3] Suez Univ, Fac Technol & Educ, Mech Dept, Suez, Egypt
[4] King Salman Int Univ, Fac Technol Ind, Sinai, Egypt
[5] Princess Nourah Bint Abdulrahman Univ, Fac Sci, Phys Dept, Riyadh, Saudi Arabia
[6] Cairo Univ, Fac Engn, Dept Chem Engn, Giza, Egypt
[7] Natl Univ Sci & Technol MISiS, Moscow 119049, Russia
[8] Damanhour Univ, Fac Sci, Phys Dept, Damanhour 22516, Egypt
[9] Taif Univ, Coll Sci, Dept Phys, POPox 11099, Taif 21944, Saudi Arabia
[10] Badr Univ Cairo BUC, Fac Engn & Technol, Cairo, Egypt
关键词:
Thermal evaporation;
Thin films;
Crystal structure;
Optical properties;
THERMOELECTRIC PROPERTIES;
ABSORPTION;
SE;
TEMPERATURE;
FABRICATION;
DEPOSITION;
ALLOY;
NANO;
D O I:
10.1016/j.mssp.2022.106557
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
Thin layers of (Bi2Se3)(1-x) (Bi2Te3)(x) samples were prepared by vacuum thermal evaporation technique. Starting materials are bulk alloys of good crystallinity. Characterization and optical properties of the synthesized films are discussed. Structure properties, surface features and roughness of the deposited films are probed via XRD, SEM and HRTEM techniques, which confirmed perfect crystallinity and nano-scalability of the samples. Transmission and reflection spectra attested that all prepared films have a growing transparency upon increasing the wave-length beyond the infra-red region, with optical band gap energy varies between 0.72 and 0.91 eV. Interesting absorption is detected in the visible light region. Enhancement of light transmission in layered bismuth chal-cogenides is achieved through incorporation of Bi2Te3 into the (Bi2Se3)(1-x) (Bi2Te3)(x) system at x = 0.20. A maximum transmittance of 81.5% was observed in the IR region. The concerned materials showed high interest for transparent and highly conductive electrodes and also for flexible electronic devices.
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