Hot melt ink technology for crystalline silicon solar cells

被引:3
作者
Williams, T [1 ]
McVicker, K [1 ]
Shaikh, A [1 ]
Koval, T [1 ]
Shea, S [1 ]
Kinsey, B [1 ]
Hetzer, D [1 ]
机构
[1] Ferro Elect Mat Syst, Vista, CA 92083 USA
来源
CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年
关键词
D O I
10.1109/PVSC.2002.1190531
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
This paper presents a. new thick film system for forming front and rear contacts on crystalline solar cells; the aim is to improve manufacturing throughput, reduce wafer breakage and improve cell efficiency. The Hot Melt ink technology presented differs from conventional thick film because unlike thick film ink that is a liquid at room temperature, the Hot Melt ink is a solid. The solid ink is processed using a resistively heated screen to melt the ink which then allows conventional screening. Once the ink is transferred to the wafer, maintained at approximately 25degreesC, it instantly resolidifies, traditional drying processes are therefore unnecessary. By eliminating the drying processes, throughput and yield is increased due to reduced substrate handling. The resolidification property of the hot melt ink may be used to reduce line spreading of the front side contact and reduce shadow losses.
引用
收藏
页码:352 / 355
页数:4
相关论文
共 2 条
[1]  
SCHMELA M, 2001, PHOTON INT MAR, P32
[2]  
2000, Patent No. 6124401