Metamorphic growth of 1.25-1.29 μm InGaAs quantum well lasers on GaAs by molecular beam epitaxy

被引：28

作者：

Tangring, I. ^{[1
]}

Wang, S. M.

Sadeghi, M.

Larsson, A.

Wang, X. D.

机构：

[1] Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden

[2] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 301卷 / 971-974期

关键词：

metamorphic growth; molecular beam epitaxy; semiconducting III-V materials; laser diodes;

D O I：

10.1016/j.jcrysgro.2006.11.171

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We demonstrate 1.25-1.29 mu m metamorphic laser diodes grown on GaAs by molecular beam epitaxy (MBE) using an alloy-graded buffer layer (GBL). Use of Be in the GBL is effective to reduce surface/interface roughness and improves optical quality. The RMS surface roughness of the optimized metamorphic laser is only two atomic monolayers for 1 x 1 mu m(2). Cross-sectional transmission electron microscopy (TEM) images confirm that most dislocations are blocked in the GBL. Ridge waveguide lasers with 4 mu m wide ridge were fabricated and characterized. The average threshold current under the pulsed excitation is in 170-200 mA for a cavity length of 0.9-1.5 mm. This value can be further reduced to about 100 mA by high-reflectivity coating. Lasers can work in an ambient temperature up to at least 50 degrees C. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：971 / 974

页数：4

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