Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates

被引：16

作者：

Martini, S ^{[1
]}

Quivy, AA ^{[1
]}

Tabata, A ^{[1
]}

Leite, JR ^{[1
]}

机构：

[1] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, Brazil

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 04期

关键词：

D O I：

10.1116/1.1303851

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-temperature photoluminescence (PL) was used to investigate the optical properties of In0.10Ga0.90As/GaAs quantum wells grown on GaAs(001) substrates with a miscut angle of 0 degrees (nominal), 2 degrees, 4 degrees and 6 degrees towards [110]. The luminescence from the quantum wells grown on a vicinal surface exhibited a blueshift compared to the nominal case. An extra emission at low energy was only observed for the nominal sample and was related to In segregation. Its absence from the PL spectrum of quantum wells grown on vicinal surfaces is a strong indication that In segregation is modified on this type of surface. Theoretical calculations confirmed our experimental data. (C) 2000 American Vacuum Society. [S0734-211X(00)01704-2].

引用

页码：1991 / 1996

页数：6

共 39 条

[1] OPTICAL CHARACTERIZATION OF PSEUDOMORPHIC INXGA1-XAS-GAAS SINGLE-QUANTUM-WELL HETEROSTRUCTURES [J].

ANDERSON, NG ;

LAIDIG, WD ;

KOLBAS, RM ;

LO, YC .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) :2361-2367

[2] VARIATION OF THE CRITICAL LAYER THICKNESS WITH IN CONTENT IN STRAINED INX GA1-XAS-GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].

ANDERSSON, TG ;

CHEN, ZG ;

KULAKOVSKII, VD ;

UDDIN, A ;

VALLIN, JT .

APPLIED PHYSICS LETTERS, 1987, 51 (10) :752-754

[3] Surface alloying at InAs-GaAs interfaces grown on (001) surfaces by molecular beam epitaxy [J].

Belk, JG ;

McConville, CF ;

Sudijono, JL ;

Jones, TS ;

Joyce, BA .

SURFACE SCIENCE, 1997, 387 (1-3) :213-226

[4] Influence of growth interruption on the heterointerface morphology of InGaAs/GaAs strained quantum wells [J].

Botha, JR ;

Leitch, AWR .

JOURNAL OF CRYSTAL GROWTH, 1996, 169 (04) :629-636

[5] PHOTOLUMINESCENCE UNDER PRESSURE OF ULTRATHIN ALAS LAYERS GROWN ON GAAS VICINAL SURFACES - A SEARCH FOR LATERAL CONFINEMENT EFFECTS [J].

CHASTAINGT, B ;

LEROUX, M ;

NEU, G ;

GRANDJEAN, N ;

DEPARIS, C ;

MASSIES, J .

PHYSICAL REVIEW B, 1993, 47 (03) :1292-1298

[6] Electroreflectance study of effects of indium segregation in molecular-beam-epitaxy-grown InGaAs/GaAs [J].

Chattopadhyay, K ;

Aubel, J ;

Sundaram, S ;

Ehret, JE ;

Kaspi, R ;

Evans, KR .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (08) :3601-3606

[7] KINETIC-MODEL OF ELEMENT-III SEGREGATION DURING MOLECULAR-BEAM EPITAXY OF III-III'-IV-SEMICONDUCTOR COMPOUNDS [J].

DEHAESE, O ;

WALLART, X ;

MOLLOT, F .

APPLIED PHYSICS LETTERS, 1995, 66 (01) :52-54

[8] PSEUDOMORPHIC INGAAS/GAAS AND GAAS/ALGAAS ASYMMETRIC TRIANGULAR QUANTUM-WELLS GROWN BY MBE FOR OPTOELECTRONIC DEVICE APPLICATIONS [J].

DROOPAD, R ;

GERBER, DS ;

CHOI, C ;

MARACAS, GN .

JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) :606-610

[9] INTERFACE STRUCTURE OF INAS GROWN ON GAAS(001) SURFACES BY MOLECULAR-BEAM EPITAXY [J].

FAWCETT, PN ;

JOYCE, BA ;

ZHANG, X ;

PASHLEY, DW .

JOURNAL OF CRYSTAL GROWTH, 1992, 116 (1-2) :81-86

[10] MONOLAYER-SCALE OPTICAL INVESTIGATION OF SEGREGATION EFFECTS IN SEMICONDUCTOR HETEROSTRUCTURES [J].

GERARD, JM ;

MARZIN, JY .

PHYSICAL REVIEW B, 1992, 45 (11) :6313-6316

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