Cathodoluminescence spectroscopy and imaging of GaN/(Al,Ga)N nanocolumns containing quantum disks

被引：16

作者：

Jahn, Uwe

Ristic, Jelena

Calleja, Enrique

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

[2] Univ Politecn Madrid, ISOM, ETSI Telecomunicac, E-28040 Madrid, Spain

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 16期

关键词：

D O I：

10.1063/1.2724913

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using spatially resolved cathodoluminescence spectroscopy, the authors have measured the spectral and spatial distribution of the luminescence intensity of GaN/(Al,Ga)N nanocolumns containing quantum disks. The optical emission of the quantum disk and of the thick (Al,Ga)N layer in the columns were clearly identified. The disk spectra of single columns are as broad as 80 meV. A significant contribution to this broadening is probably due to the laterally inhomogeneous strain distribution within the disks. The optical emission of the thick (Al,Ga)N layer in the columns is spread out over a wide spectral range of several 100 meV, which is caused by an inhomogeneous incorporation of Al along the growth direction of the columns. (c) 2007 American Institute of Physics.

引用

页数：3

共 15 条

[1] Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy [J].

Calleja, E ;

Sánchez-García, MA ;

Sánchez, FJ ;

Calle, F ;

Naranjo, FB ;

Muñoz, E ;

Jahn, U ;

Ploog, K .

PHYSICAL REVIEW B, 2000, 62 (24) :16826-16834

[2] InGaN/GaN multiple quantum disk nanocolumn light-emitting diodes grown on (111)Si substrate [J].

Kikuchi, A ;

Kawai, M ;

Tada, M ;

Kishino, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (12A) :L1524-L1526

[3]

Lantier R, 2000, IPAP CONFERENCE SER, V1, P166

[4] Photoluminescence of InGaN/GaN and AlGaN/GaN multiple quantum well structures: role of depletion fields and polarization fields [J].

Monemar, B ;

Paskov, PP ;

Haratizadeh, H ;

Holtz, PO ;

Bergman, JP ;

Kamiyama, S ;

Iwaya, M ;

Amano, H ;

Akasaki, I .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2003, 195 (03) :523-527

[5] Carrier-confinement effects in nanocolumnar GaN/AlxGa1-xN quantum disks grown by molecular-beam epitaxy -: art. no. 085330 [J].

Ristic, J ;

Rivera, C ;

Calleja, E ;

Fernández-Garrido, S ;

Povoloskyi, M ;

Di Carlo, A .

PHYSICAL REVIEW B, 2005, 72 (08)

[6] Columnar AlGaN/GaN nanocavities with AlN/GaN Bragg reflectors grown by molecular beam epitaxy on Si(111) -: art. no. 146102 [J].

Ristic, J ;

Calleja, E ;

Trampert, A ;

Fernández-Garrido, S ;

Rivera, C ;

Jahn, U ;

Ploog, KH .

PHYSICAL REVIEW LETTERS, 2005, 94 (14)

[7] Characterization of GaN quantum discs embedded in AlxGa1-xN nanocolumns grown by molecular beam epitaxy -: art. no. 125305 [J].

Ristic, J ;

Calleja, E ;

Sánchez-García, MA ;

Ulloa, JM ;

Sánchez-Páramo, J ;

Calleja, JM ;

Jahn, U ;

Trampert, A ;

Ploog, KH .

PHYSICAL REVIEW B, 2003, 68 (12)

[8]

Ristic J, 2002, PHYS STATUS SOLIDI B, V234, P717, DOI 10.1002/1521-3951(200212)234:3<717::AID-PSSB717>3.0.CO

[9]

2-8

[10]

Ristic J, 2002, PHYS STATUS SOLIDI A, V192, P60, DOI 10.1002/1521-396X(200207)192:1<60::AID-PSSA60>3.0.CO

← 1 2 →